v60100c www.vishay.com vishay general semiconductor revision: 16-aug-13 1 document number: 89155 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high voltage trench mos barrier schottky rectifier ultra low v f = 0.36 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters and reverse battery protection. mechanical data case: to-220ab ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs max. ? primary characteristics i f(av) 2 x 30 a v rrm 100 v i fsm 320 a v f at i f = 30 a 0.66 v t j max. 150 c package to-220ab diode variation common cathode to-220ab v60100c 1 2 3 pin 1 pin 2 case pin 3 tmbs ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v60100c unit max. repetitive pe ak reverse voltage v rrm 100 v max. average forward rectified current (fig. 1) per device i f(av) 60 a per diode 30 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on ra ted load per diode i fsm 320 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 40 to + 150 c
v60100c www.vishay.com vishay general semiconductor revision: 16-aug-13 2 document number: 89155 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ? ratings and characteristics curves ? (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditio ns symbol typ. max. unit breakdown voltage i r = 1.0 ma t a = 25 c v br 100 (min.) - v instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.45 - v i f = 10 a 0.52 - i f = 15 a 0.58 0.63 i f = 20 a 0.63 - i f = 30 a 0.73 0.79 i f = 5 a t a = 125 c 0.36 - i f = 10 a 0.45 - i f = 15 a 0.53 0.58 i f = 20 a 0.58 - i f = 30 a 0.66 0.70 reverse current at rated v r per diode v r = 80 v t a = 25 c i r (2) 24 500 a t a = 125 c 13 20 ma v r = 100 v t a = 25 c 65 1000 a t a = 125 c 30 - ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v60100c unit typical thermal resistance per diode r ? jc 2.5 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab v60100c-m3/4w 1.89 4w 50/tube tube average forward current (a) case temperature (c) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 resistive or inductive load 70 d = 0.1 d = 0.3 d = 0.5 d = 0.8 d = 0.2 d = 1.0 0 0 5 10 15 20 25 30 35 5 10 15 20 25 30 average power loss (w) ave rage forwa rd current (a) d = t p /t t p t
v60100c www.vishay.com vishay general semiconductor revision: 16-aug-13 3 document number: 89155 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode package outline dimensions in inches (millimeters) t a = 150 c t a = 100 c t a = 25 c t a = 125 c instan taneous forward current (a ) instantaneous forward voltage (v) 0 0.2 0.4 0.6 0.8 1 100 10 1 0.1 t a = 150 c t a = 125 c t a = 100 c t a = 25 c 10 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage (%) 1000 100 10 1 0.001 0.1 0.01 instantaneous reverse current (ma) 0.1 1 10 100 10 000 1000 100 reverse voltage (v) junction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 0.01 0.1 1 10 100 10 1 0.1 transient thermal impedance (c/w) t - pulse duration (s) to-220ab 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15.87) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55)
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